2N7002LT1G vs MMBF170LT1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2N7002LT1G sa pamamagitan ng onsemi at MMBF170LT1 sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

onsemi
2N7002LT1G 2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2N7002LT1G MMBF170LT1
Brand onsemi onsemi
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity N-Channel N-Channel
Channel Mode Enhancement Mode —
Drain-Source Voltage VDSS 60 V —
Continuous Drain Current ID 115 mA (Tc) —
Power Dissipation PD 225 mW (Ta) —
Maximum RDS(on) 7.5 ohm @ VGS = 5 V —
Configuration Single FET —
Packhaging SOT-23-3 (TO-236) —
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pins 3 —
Kategorya Small Signal MOSFET —
Technology MOSFET DMOS
Manufacturer onsemi (ON Semiconductor) onsemi (ON Semiconductor)
Lead Finish [DATA_NEEDED: lead finish/plating] —
Hanay ng Temperature na Operasyon [DATA_NEEDED: operating temperature range] -55 °C to +150 °C (TJ max per datasheet)
Packaging [DATA_NEEDED: packaging type] —
Part Number — MMBF170LT1
Uri ng Transistor — N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDSS) — 60 V
Drain-Gate Voltage (VDGS) — 60 Vdc
Gate-Source Voltage - Continuous (VGS) — ±20 Vdc (per datasheet)
Gate-Source Voltage - Non-repetitive (VGSM) — ±40 Vpk (tp <= 50 ms)
Continuous Drain Current (ID) — 500 mA (Ta)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Total Device Dissipation (PD) — 225 mW (Ta, FR-5 board)
Packhaging / Kaso — SOT-23-3 (TO-236)
Bilang ng Pin — 3
Tindminan RoHS — Compliant (per onsemi product page)
AEC-Q101 Qualified — Yes (per datasheet)

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