BSC0502NSIATMA1 vs IPD046N08N5ATMA1 Perbandingan
Perbandingan bersamaan detil BSC0502NSIATMA1 dari Infineon dan IPD046N08N5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | BSC0502NSIATMA1 | IPD046N08N5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Trench MOSFET) | OptiMOS™ 5 trench MOSFET |
| Drain-Source Voltage (VDS) Max | 30 V | 80 V |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Continuous Drain Current (ID) at TA | 26 A | — |
| RDS(on) Max at VGS=10V | 2.3 mOhm | — |
| Gate Charge QG (0V to 4.5V) Typ | 9.0 nC | — |
| Output Charge QOSS Typ | 13.5 nC | — |
| Power Dissipation at TA (Ta=25C) | 2.5 W | — |
| Power Dissipation at TC (Tc=25C) | 43 W | — |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Rentang Suhu Kerja | -55C to +150C | — |
| Paket | PG-TDSON-8 (SuperSO8 5x6) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | ROHS3 Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS™ 5 80V |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25°C | — | 90 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 4.6 mΩ |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Power Dissipation (PD) at Tc=25°C | — | 125 W |
| Rentang Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Paket / Case | — | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Configuration | — | Single N-channel, 3-pin (Gate / Drain tab / Source) |