BSC0502NSIATMA1 vs IPD046N08N5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0502NSIATMA1 disebabkan oleh Infineon dan IPD046N08N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | BSC0502NSIATMA1 | IPD046N08N5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Trench MOSFET) | OptiMOS™ 5 trench MOSFET |
| Drain-Source Voltage (VDS) Max | 30 V | 80 V |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Continuous Drain Current (ID) at TA | 26 A | — |
| RDS(on) Max at VGS=10V | 2.3 mOhm | — |
| Gate Charge QG (0V to 4.5V) Typ | 9.0 nC | — |
| Output Charge QOSS Typ | 13.5 nC | — |
| Power Dissipation at TA (Ta=25C) | 2.5 W | — |
| Power Dissipation at TC (Tc=25C) | 43 W | — |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Kemasan | PG-TDSON-8 (SuperSO8 5x6) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | ROHS3 Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS™ 5 80V |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25°C | — | 90 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 4.6 mΩ |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Power Dissipation (PD) at Tc=25°C | — | 125 W |
| Gambaran Suhu Hubungan Operasi | — | -55 °C to +175 °C |
| Kemasan / Case | — | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| Configuration | — | Single N-channel, 3-pin (Gate / Drain tab / Source) |