BSC0502NSIATMA1 vs IPD046N08N5ATMA1 比較
詳細並排比較 BSC0502NSIATMA1 由 Infineon 與 IPD046N08N5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC0502NSIATMA1 | IPD046N08N5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Trench MOSFET) | OptiMOS™ 5 trench MOSFET |
| Drain-Source Voltage (VDS) Max | 30 V | 80 V |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Continuous Drain Current (ID) at TA | 26 A | — |
| RDS(on) Max at VGS=10V | 2.3 mOhm | — |
| Gate Charge QG (0V to 4.5V) Typ | 9.0 nC | — |
| Output Charge QOSS Typ | 13.5 nC | — |
| Power Dissipation at TA (Ta=25C) | 2.5 W | — |
| Power Dissipation at TC (Tc=25C) | 43 W | — |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | — |
| 工作溫度範圍 | -55C to +150C | — |
| 封裝 | PG-TDSON-8 (SuperSO8 5x6) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | ROHS3 Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS™ 5 80V |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25°C | — | 90 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 4.6 mΩ |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Power Dissipation (PD) at Tc=25°C | — | 125 W |
| 工作接面溫度範圍 | — | -55 °C to +175 °C |
| 封裝 / 外殼 | — | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |
| Configuration | — | Single N-channel, 3-pin (Gate / Drain tab / Source) |