BSC0502NSIATMA1 vs IPD046N08N5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC0502NSIATMA1 sa pamamagitan ng Infineon at IPD046N08N5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD046N08N5ATMA1 IPD046N08N5ATMA1 - 80V 90A 4.6mΩ OptiMOS 5 MOSFET | Infineon

IPD046N08N5ATMA1 - 80V 90A 4.6mΩ OptiMOS 5 MOSFET | Infineon

IPD046N08N5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC0502NSIATMA1 IPD046N08N5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology OptiMOS 5 (Trench MOSFET) OptiMOS™ 5 trench MOSFET
Drain-Source Voltage (VDS) Max 30 V 80 V
Continuous Drain Current (ID) at TC 100 A —
Continuous Drain Current (ID) at TA 26 A —
RDS(on) Max at VGS=10V 2.3 mOhm —
Gate Charge QG (0V to 4.5V) Typ 9.0 nC —
Output Charge QOSS Typ 13.5 nC —
Power Dissipation at TA (Ta=25C) 2.5 W —
Power Dissipation at TC (Tc=25C) 43 W —
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] —
Hanay ng Temperature na Operasyon -55C to +150C —
Packhaging PG-TDSON-8 (SuperSO8 5x6) —
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant ROHS3 Compliant
Manufacturer — Infineon Technologies
Product Series — OptiMOS™ 5 80V
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25°C — 90 A
On-Resistance RDS(on) Max at VGS=10V — 4.6 mΩ
Gate-Source Voltage (VGS) Max — ±20 V
Power Dissipation (PD) at Tc=25°C — 125 W
Hanay ng Temperature ng Junction na Operasyon — -55 °C to +175 °C
Packhaging / Kaso — PG-TO252-3 (DPAK), 3-pin (2 leads + tab)
Level ng MSL — 1 (per JEDEC J-STD-020)
Configuration — Single N-channel, 3-pin (Gate / Drain tab / Source)

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