BSP88H6327XTSA1 vs BSS87H6327FTSA1 Perbandingan
Perbandingan bersamaan detil BSP88H6327XTSA1 dari Infineon dan BSS87H6327FTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSP88H6327XTSA1 | BSS87H6327FTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 240 V | 240 V |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | 260 mA (Ta) |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | 1 W (Ta) |
| Paket | PG-SOT223-4 (SOT-223-3) | PG-SOT89-4-2 (SOT-89) |
| Tipe Mounting | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | — |
| Configuration | Single | — |
| Suhu Kerja | -55 C to +150 C | — |
| Technology | SIPMOS (planar enhancement mode) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| Level MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain Tab Connection | SOT-223 tab is drain | — |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source On-Resistance (RDS(on)) | — | 6 ohm max at VGS=10V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Rentang Suhu Kerja | — | -55C to +150C (junction) |
| Jumlah Pin | — | 3 (Gate / Drain / Source) |
| Status RoHS | — | Compliant |
| Lead-Free / Pb-Free | — | Yes (Pb-free plating) |
| Process Technology | — | Vertical DMOS |