BSP88H6327XTSA1 vs BSS87H6327FTSA1 比較
詳細並排比較 BSP88H6327XTSA1 由 Infineon 與 BSS87H6327FTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSP88H6327XTSA1 | BSS87H6327FTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 240 V | 240 V |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | 260 mA (Ta) |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | 1 W (Ta) |
| 封裝 | PG-SOT223-4 (SOT-223-3) | PG-SOT89-4-2 (SOT-89) |
| 安裝類型 | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | — |
| Configuration | Single | — |
| 工作溫度 | -55 C to +150 C | — |
| Technology | SIPMOS (planar enhancement mode) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain Tab Connection | SOT-223 tab is drain | — |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source On-Resistance (RDS(on)) | — | 6 ohm max at VGS=10V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| 工作溫度範圍 | — | -55C to +150C (junction) |
| 腳位數 | — | 3 (Gate / Drain / Source) |
| RoHS 狀態 | — | Compliant |
| Lead-Free / Pb-Free | — | Yes (Pb-free plating) |
| Process Technology | — | Vertical DMOS |