BSP88H6327XTSA1 vs BSS87H6327FTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP88H6327XTSA1 disebabkan oleh Infineon dan BSS87H6327FTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSP88H6327XTSA1 | BSS87H6327FTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 240 V | 240 V |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | 260 mA (Ta) |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | 1 W (Ta) |
| Kemasan | PG-SOT223-4 (SOT-223-3) | PG-SOT89-4-2 (SOT-89) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | — |
| Configuration | Single | — |
| Suhu Operasi | -55 C to +150 C | — |
| Technology | SIPMOS (planar enhancement mode) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| Aras MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain Tab Connection | SOT-223 tab is drain | — |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source On-Resistance (RDS(on)) | — | 6 ohm max at VGS=10V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gambaran Suhu Operasi | — | -55C to +150C (junction) |
| Kiraan Pin | — | 3 (Gate / Drain / Source) |
| Status RoHS | — | Compliant |
| Lead-Free / Pb-Free | — | Yes (Pb-free plating) |
| Process Technology | — | Vertical DMOS |