BSP88H6327XTSA1 vs BSS87H6327FTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSP88H6327XTSA1 sa pamamagitan ng Infineon at BSS87H6327FTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSP88H6327XTSA1 | BSS87H6327FTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 240 V | 240 V |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | 260 mA (Ta) |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | 1 W (Ta) |
| Packhaging | PG-SOT223-4 (SOT-223-3) | PG-SOT89-4-2 (SOT-89) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | — |
| Configuration | Single | — |
| Temperature na Operasyon | -55 C to +150 C | — |
| Technology | SIPMOS (planar enhancement mode) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| Level ng MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain Tab Connection | SOT-223 tab is drain | — |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source On-Resistance (RDS(on)) | — | 6 ohm max at VGS=10V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Hanay ng Temperature na Operasyon | — | -55C to +150C (junction) |
| Bilang ng Pin | — | 3 (Gate / Drain / Source) |
| Tindminan RoHS | — | Compliant |
| Lead-Free / Pb-Free | — | Yes (Pb-free plating) |
| Process Technology | — | Vertical DMOS |