BSR315PH6327XTSA1 vs BSP125H6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSR315PH6327XTSA1 dari Infineon dan BSP125H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSR315PH6327XTSA1 BSP125H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSR315PH6327XTSA1 BSP125H6327XTSA1
Series OptiMOS P-Channel —
FET Type P-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) -60 V 600 V
Continuous Drain Current (ID) -620 mA (Ta) 120 mA (Ta)
Power Dissipation (PD) 500 mW (Ta) 1.8 W (Ta)
On-State Resistance (RDS(on)) 800 mOhm @ -620 mA, -10 V —
Gate Threshold Voltage (VGS(th)) ±20 V (max VGS) [DATA_NEEDED: VGS(th) typical value]
Input Capacitance (Ciss) 176 pF @ 25 V —
Total Gate Charge (Qg) 6 nC @ 10 V —
Rentang Suhu Kerja -55 C to +150 C (TJ) —
Paket PG-SC59-3 / SOT-23-3 PG-SOT223-4 (SOT-223-3 + tab)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
Packaging Tape & Reel (TR) —
Status RoHS Compliant Compliant
Automotive Qualified Yes (per Infineon product family marking) —
Tipe Transistor — N-Channel MOSFET
Technology — SIPMOS (Small Signal Power MOSFET)
Suhu Kerja — -55C to +150C (TJ)
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V]
Configuration — Single
Channel Mode — Enhancement
Level MSL — 1 (Unlimited)
Qualification — Automotive / Industrial grade

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