BSR315PH6327XTSA1 vs BSP125H6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSR315PH6327XTSA1 disebabkan oleh Infineon dan BSP125H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSR315PH6327XTSA1 BSP125H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSR315PH6327XTSA1 BSP125H6327XTSA1
Series OptiMOS P-Channel —
FET Type P-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) -60 V 600 V
Continuous Drain Current (ID) -620 mA (Ta) 120 mA (Ta)
Power Dissipation (PD) 500 mW (Ta) 1.8 W (Ta)
On-State Resistance (RDS(on)) 800 mOhm @ -620 mA, -10 V —
Gate Threshold Voltage (VGS(th)) ±20 V (max VGS) [DATA_NEEDED: VGS(th) typical value]
Input Capacitance (Ciss) 176 pF @ 25 V —
Total Gate Charge (Qg) 6 nC @ 10 V —
Gambaran Suhu Operasi -55 C to +150 C (TJ) —
Kemasan PG-SC59-3 / SOT-23-3 PG-SOT223-4 (SOT-223-3 + tab)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 —
Packaging Tape & Reel (TR) —
Status RoHS Compliant Compliant
Automotive Qualified Yes (per Infineon product family marking) —
Jenis Transistor — N-Channel MOSFET
Technology — SIPMOS (Small Signal Power MOSFET)
Suhu Operasi — -55C to +150C (TJ)
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V]
Configuration — Single
Channel Mode — Enhancement
Aras MSL — 1 (Unlimited)
Qualification — Automotive / Industrial grade

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