FODM217AR2 vs FODM217A Perbandingan
Perbandingan bersamaan detil FODM217AR2 dari onsemi dan FODM217A dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | FODM217AR2 | FODM217A |
|---|---|---|
| Merek | onsemi | onsemi |
| Kategori | Optocouplers | Optocouplers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Part Number | FODM217AR2 | — |
| Manufacturer | onsemi (ON Semiconductor) | — |
| Device Type | Single-Channel DC-Sensing Phototransistor Optocoupler | — |
| Konfigurasi Output | Transistor (phototransistor, single channel) | — |
| Number of Channels | 1 | — |
| Input Type | DC sensing | DC Sensing |
| Paket | 4-SOP / MFP-4 (half-pitch mini-flat, 1.27 mm pitch) | 4-SOP (Half-Pitch Mini-Flat) |
| Isolation Voltage (VISO) | 3750 Vrms (per UL 1577) | 3,750 VACrms |
| Tegangan Pemisah-Penjana (Vceo) | 80 V maximum | — |
| Arus Pemisah (Ic) | 50 mA maximum | — |
| Forward Current (IF) | 50 mA maximum | — |
| Forward Voltage (VF) | 1.2 V typical at IF=10 mA | — |
| VCE(SAT) | 0.4 V maximum at IC=2.4 mA, IF=8 mA | — |
| Current Transfer Ratio (CTR) | 50% to 600% at IF=5 mA, VCE=5 V | — |
| Response Time (tr / tf) | 4 us / 3 us typical | — |
| Suhu Kerja | -40 C to +110 C | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| UL Recognition | UL 1577 recognized (File E90700) | — |
| Level MSL | 1 per IPC/JEDEC J-STD-020 | — |
| Channel Count | — | 1 |
| Tipe Output | — | Phototransistor |
| Jumlah Pin | — | 4 |
| Emitter Material | — | Gallium Arsenide (GaAs) Infrared LED |
| Detector Type | — | Silicon Phototransistor |
| Rentang Suhu Kerja | — | -40 C to +110 C |
| Forward Voltage (VF) Typical | — | 1.2 V at IF = 10 mA |
| Reverse Voltage (VR) Maximum | — | 6 V |
| Collector-Emitter Voltage (VCEO) Maximum | — | 80 V |
| Emitter-Base Voltage (VEBO) Maximum | — | 7 V |
| Collector Current (IC) Maximum | — | 50 mA |