FODM217AR2 vs FODM217A Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng FODM217AR2 sa pamamagitan ng onsemi at FODM217A sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro FODM217AR2 FODM217A
Brand onsemi onsemi
Kategorya Optocouplers Optocouplers
Katayuan ng Lifecycle Aktibo Aktibo
Part Number FODM217AR2 —
Manufacturer onsemi (ON Semiconductor) —
Device Type Single-Channel DC-Sensing Phototransistor Optocoupler —
Output Kumpigurasyon Transistor (phototransistor, single channel) —
Number of Channels 1 —
Input Type DC sensing DC Sensing
Packhaging 4-SOP / MFP-4 (half-pitch mini-flat, 1.27 mm pitch) 4-SOP (Half-Pitch Mini-Flat)
Isolation Voltage (VISO) 3750 Vrms (per UL 1577) 3,750 VACrms
Voltage ng Collector-Emitter (Vceo) 80 V maximum —
Current na Pinakamataas ng Collector (Ic) 50 mA maximum —
Forward Current (IF) 50 mA maximum —
Forward Voltage (VF) 1.2 V typical at IF=10 mA —
VCE(SAT) 0.4 V maximum at IC=2.4 mA, IF=8 mA —
Current Transfer Ratio (CTR) 50% to 600% at IF=5 mA, VCE=5 V —
Response Time (tr / tf) 4 us / 3 us typical —
Temperature na Operasyon -40 C to +110 C —
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
UL Recognition UL 1577 recognized (File E90700) —
Level ng MSL 1 per IPC/JEDEC J-STD-020 —
Channel Count — 1
Type ng Output — Phototransistor
Bilang ng Pins — 4
Emitter Material — Gallium Arsenide (GaAs) Infrared LED
Detector Type — Silicon Phototransistor
Hanay ng Temperature na Operasyon — -40 C to +110 C
Forward Voltage (VF) Typical — 1.2 V at IF = 10 mA
Reverse Voltage (VR) Maximum — 6 V
Collector-Emitter Voltage (VCEO) Maximum — 80 V
Emitter-Base Voltage (VEBO) Maximum — 7 V
Collector Current (IC) Maximum — 50 mA

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