FODM217AR2 vs FODM217A 比較
詳細並排比較 FODM217AR2 由 onsemi 與 FODM217A 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | FODM217AR2 | FODM217A |
|---|---|---|
| 品牌 | onsemi | onsemi |
| 類別 | Optocouplers | Optocouplers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Part Number | FODM217AR2 | — |
| Manufacturer | onsemi (ON Semiconductor) | — |
| Device Type | Single-Channel DC-Sensing Phototransistor Optocoupler | — |
| 輸出配置 | Transistor (phototransistor, single channel) | — |
| Number of Channels | 1 | — |
| Input Type | DC sensing | DC Sensing |
| 封裝 | 4-SOP / MFP-4 (half-pitch mini-flat, 1.27 mm pitch) | 4-SOP (Half-Pitch Mini-Flat) |
| Isolation Voltage (VISO) | 3750 Vrms (per UL 1577) | 3,750 VACrms |
| 集極-射極電壓 (Vceo) | 80 V maximum | — |
| 集極電流 (Ic) | 50 mA maximum | — |
| Forward Current (IF) | 50 mA maximum | — |
| Forward Voltage (VF) | 1.2 V typical at IF=10 mA | — |
| VCE(SAT) | 0.4 V maximum at IC=2.4 mA, IF=8 mA | — |
| Current Transfer Ratio (CTR) | 50% to 600% at IF=5 mA, VCE=5 V | — |
| Response Time (tr / tf) | 4 us / 3 us typical | — |
| 工作溫度 | -40 C to +110 C | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| UL Recognition | UL 1577 recognized (File E90700) | — |
| MSL 等級 | 1 per IPC/JEDEC J-STD-020 | — |
| Channel Count | — | 1 |
| 輸出類型 | — | Phototransistor |
| 腳位數 | — | 4 |
| Emitter Material | — | Gallium Arsenide (GaAs) Infrared LED |
| Detector Type | — | Silicon Phototransistor |
| 工作溫度範圍 | — | -40 C to +110 C |
| Forward Voltage (VF) Typical | — | 1.2 V at IF = 10 mA |
| Reverse Voltage (VR) Maximum | — | 6 V |
| Collector-Emitter Voltage (VCEO) Maximum | — | 80 V |
| Emitter-Base Voltage (VEBO) Maximum | — | 7 V |
| Collector Current (IC) Maximum | — | 50 mA |