IAUT300N08S5N012ATMA2 vs IAUS300N08S5N012 Perbandingan

Perbandingan bersamaan detil IAUT300N08S5N012ATMA2 dari Infineon dan IAUS300N08S5N012 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUT300N08S5N012ATMA2 IAUS300N08S5N012
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™-5 80 V —
Tipe Transistor N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc=25°C) 300 A —
Pulsed Drain Current (IDM) 1200 A (per datasheet, typical) —
On-Resistance RDS(on) max @ VGS=10V 1.2 mΩ —
Maximum Power Dissipation (PD, Tc) 375 W —
Gate-to-Source Voltage (VGS) ±20 V —
Rentang Suhu Kerja -55 °C to +175 °C (TJ) -55°C to +175°C
Paket PG-HSOF-8-1 (8-pin HSOF with drain tab) PG-HSOG-8-1 (Surface Mount)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS Compliance Compliant RoHS compliant (Green product)
Level MSL [DATA_NEEDED: MSL level] MSL1 (up to 260°C peak reflow)
Series — OptiMOS 5
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TC — 300 A
On-Resistance R<sub>DS(on)</sub> Max at VGS=10V — 1.2 mΩ typical
Gate-Source Threshold Voltage VGS(th) — 3.8 V at 275 µA
Power Dissipation (PD) at TC — 375 W
Avalanche Rating — 100% Avalanche tested
Technology — OptiMOS 5 planar trench
Terminals — 8

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