IAUT300N08S5N012ATMA2 vs IAUS300N08S5N012 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUT300N08S5N012ATMA2 disebabkan oleh Infineon dan IAUS300N08S5N012 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUT300N08S5N012ATMA2 IAUS300N08S5N012
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™-5 80 V —
Jenis Transistor N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc=25°C) 300 A —
Pulsed Drain Current (IDM) 1200 A (per datasheet, typical) —
On-Resistance RDS(on) max @ VGS=10V 1.2 mΩ —
Maximum Power Dissipation (PD, Tc) 375 W —
Gate-to-Source Voltage (VGS) ±20 V —
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) -55°C to +175°C
Kemasan PG-HSOF-8-1 (8-pin HSOF with drain tab) PG-HSOG-8-1 (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS Compliance Compliant RoHS compliant (Green product)
Aras MSL [DATA_NEEDED: MSL level] MSL1 (up to 260°C peak reflow)
Series — OptiMOS 5
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TC — 300 A
On-Resistance R<sub>DS(on)</sub> Max at VGS=10V — 1.2 mΩ typical
Gate-Source Threshold Voltage VGS(th) — 3.8 V at 275 µA
Power Dissipation (PD) at TC — 375 W
Avalanche Rating — 100% Avalanche tested
Technology — OptiMOS 5 planar trench
Terminals — 8

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