IAUT300N08S5N012ATMA2 vs IAUS300N08S5N012 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUT300N08S5N012ATMA2 sa pamamagitan ng Infineon at IAUS300N08S5N012 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUT300N08S5N012ATMA2 IAUS300N08S5N012
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™-5 80 V —
Uri ng Transistor N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc=25°C) 300 A —
Pulsed Drain Current (IDM) 1200 A (per datasheet, typical) —
On-Resistance RDS(on) max @ VGS=10V 1.2 mΩ —
Maximum Power Dissipation (PD, Tc) 375 W —
Gate-to-Source Voltage (VGS) ±20 V —
Hanay ng Temperature na Operasyon -55 °C to +175 °C (TJ) -55°C to +175°C
Packhaging PG-HSOF-8-1 (8-pin HSOF with drain tab) PG-HSOG-8-1 (Surface Mount)
Uri ng Pagpapasok Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS Compliance Compliant RoHS compliant (Green product)
Level ng MSL [DATA_NEEDED: MSL level] MSL1 (up to 260°C peak reflow)
Series — OptiMOS 5
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TC — 300 A
On-Resistance R<sub>DS(on)</sub> Max at VGS=10V — 1.2 mΩ typical
Gate-Source Threshold Voltage VGS(th) — 3.8 V at 275 µA
Power Dissipation (PD) at TC — 375 W
Avalanche Rating — 100% Avalanche tested
Technology — OptiMOS 5 planar trench
Terminals — 8

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