IPD031N06L3GATMA1 vs IPD90N03S4L02ATMA1 Perbandingan
Perbandingan bersamaan detil IPD031N06L3GATMA1 dari Infineon dan IPD90N03S4L02ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΩ N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 ✓ AktifInfineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPD031N06L3GATMA1 | IPD90N03S4L02ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide), OptiMOS-T2 trench |
| Drain-to-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| Maximum Power Dissipation (PD) at TC=25°C | 167 W | — |
| RDS(on) Max at VGS=10V | 3.1 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V | [DATA_NEEDED: typical value] |
| Gate Drive Voltage (Max RDS(on)) | 4.5 V, 10 V | — |
| Total Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typical value] | — |
| Rentang Suhu Kerja | -55°C to +175°C | — |
| Paket | PG-TO252-3 (DPAK) | PG-TO252-3-11 (DPAK, surface mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Series | OptiMOS 3 | OptiMOS-T2 |
| Level MSL | 1 (Unlimited) | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) |
| Status RoHS | Compliant | Compliant (Green Package) |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| Power Dissipation (PD) at Tc | — | 136 W |
| RDS(on) Max at VGS=10 V | — | 2.2 mΩ |
| RDS(on) Max at VGS=4.5 V | — | [DATA_NEEDED: typical value at VGS=4.5 V] |
| Gate Drive Voltage (VGS) | — | 4.5 V to 10 V |
| Suhu Hubung Kerja | — | -55°C to +175°C |
| Avalanche Rated | — | 100% Avalanche tested |
| Automotive Qualification | — | AEC-Q101 qualified |