IPD031N06L3GATMA1 vs IPD90N03S4L02ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD031N06L3GATMA1 disebabkan oleh Infineon dan IPD90N03S4L02ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD031N06L3GATMA1 IPD90N03S4L02ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide), OptiMOS-T2 trench
Drain-to-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) 400 A —
Maximum Power Dissipation (PD) at TC=25°C 167 W —
RDS(on) Max at VGS=10V 3.1 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V [DATA_NEEDED: typical value]
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V —
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value] —
Gambaran Suhu Operasi -55°C to +175°C —
Kemasan PG-TO252-3 (DPAK) PG-TO252-3-11 (DPAK, surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Series OptiMOS 3 OptiMOS-T2
Aras MSL 1 (Unlimited) MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow)
Status RoHS Compliant Compliant (Green Package)
Continuous Drain Current (ID) at Tc — 90 A
Power Dissipation (PD) at Tc — 136 W
RDS(on) Max at VGS=10 V — 2.2 mΩ
RDS(on) Max at VGS=4.5 V — [DATA_NEEDED: typical value at VGS=4.5 V]
Gate Drive Voltage (VGS) — 4.5 V to 10 V
Suhu Hubungan Operasi — -55°C to +175°C
Avalanche Rated — 100% Avalanche tested
Automotive Qualification — AEC-Q101 qualified

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