IPD031N06L3GATMA1 vs IPD90N03S4L02ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD031N06L3GATMA1 sa pamamagitan ng Infineon at IPD90N03S4L02ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IPD031N06L3GATMA1 IPD90N03S4L02ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide), OptiMOS-T2 trench
Drain-to-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) 400 A —
Maximum Power Dissipation (PD) at TC=25°C 167 W —
RDS(on) Max at VGS=10V 3.1 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V [DATA_NEEDED: typical value]
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V —
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value] —
Hanay ng Temperature na Operasyon -55°C to +175°C —
Packhaging PG-TO252-3 (DPAK) PG-TO252-3-11 (DPAK, surface mount)
Uri ng Pagpapasok Surface Mount Surface Mount
Series OptiMOS 3 OptiMOS-T2
Level ng MSL 1 (Unlimited) MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow)
Tindminan RoHS Compliant Compliant (Green Package)
Continuous Drain Current (ID) at Tc — 90 A
Power Dissipation (PD) at Tc — 136 W
RDS(on) Max at VGS=10 V — 2.2 mΩ
RDS(on) Max at VGS=4.5 V — [DATA_NEEDED: typical value at VGS=4.5 V]
Gate Drive Voltage (VGS) — 4.5 V to 10 V
Temperature ng Junction na Operasyon — -55°C to +175°C
Avalanche Rated — 100% Avalanche tested
Automotive Qualification — AEC-Q101 qualified

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