IPD034N06N3GATMA1 vs IRL40S212ARMA1 Perbandingan

Perbandingan bersamaan detil IPD034N06N3GATMA1 dari Infineon dan IRL40S212ARMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD034N06N3GATMA1 IRL40S212ARMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
Technology N-Channel Trench MOSFET (OptiMOS 3) StrongIRFET™ (planar N-channel)
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID) at Tc 100 A —
Maximum Power Dissipation (Ptot) 167 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mOhm —
Gate Threshold Voltage VGS(th) 4 V at 93 uA —
Gate-Source Voltage (VGS) max [DATA_NEEDED: max VGS rating] [DATA_NEEDED: VGS max]
Paket PG-TO252-3 (DPAK) PG-TO263-3 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Pin Configuration 3-Pin (2 + Tab) —
Rentang Suhu Kerja [DATA_NEEDED: Tj min/max] [DATA_NEEDED: Tj max]
Status RoHS Compliant (Pb-free green finish) Compliant
Automotive Qualified Yes (per Infineon product page) —
Level MSL [DATA_NEEDED: MSL rating] 1 (unlimited)
Part Family — StrongIRFET™
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc) — 195 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) — 1.9 mOhm max
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
Power Dissipation (PD, Tc) — 231 W
Lead-Free — Yes

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