IPD034N06N3GATMA1 vs IRL40S212ARMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD034N06N3GATMA1 sa pamamagitan ng Infineon at IRL40S212ARMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPD034N06N3GATMA1 | IRL40S212ARMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| Technology | N-Channel Trench MOSFET (OptiMOS 3) | StrongIRFET™ (planar N-channel) |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Maximum Power Dissipation (Ptot) | 167 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | — |
| Gate Threshold Voltage VGS(th) | 4 V at 93 uA | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: max VGS rating] | [DATA_NEEDED: VGS max] |
| Packhaging | PG-TO252-3 (DPAK) | PG-TO263-3 (D2PAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Pin Configuration | 3-Pin (2 + Tab) | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Tj min/max] | [DATA_NEEDED: Tj max] |
| Tindminan RoHS | Compliant (Pb-free green finish) | Compliant |
| Automotive Qualified | Yes (per Infineon product page) | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Part Family | — | StrongIRFET™ |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 195 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) | — | 1.9 mOhm max |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation (PD, Tc) | — | 231 W |
| Lead-Free | — | Yes |