IPD034N06N3GATMA1 vs IRL40S212ARMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD034N06N3GATMA1 disebabkan oleh Infineon dan IRL40S212ARMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD034N06N3GATMA1 IRL40S212ARMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
Technology N-Channel Trench MOSFET (OptiMOS 3) StrongIRFET™ (planar N-channel)
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID) at Tc 100 A —
Maximum Power Dissipation (Ptot) 167 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mOhm —
Gate Threshold Voltage VGS(th) 4 V at 93 uA —
Gate-Source Voltage (VGS) max [DATA_NEEDED: max VGS rating] [DATA_NEEDED: VGS max]
Kemasan PG-TO252-3 (DPAK) PG-TO263-3 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Pin Configuration 3-Pin (2 + Tab) —
Gambaran Suhu Operasi [DATA_NEEDED: Tj min/max] [DATA_NEEDED: Tj max]
Status RoHS Compliant (Pb-free green finish) Compliant
Automotive Qualified Yes (per Infineon product page) —
Aras MSL [DATA_NEEDED: MSL rating] 1 (unlimited)
Part Family — StrongIRFET™
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc) — 195 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) — 1.9 mOhm max
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
Power Dissipation (PD, Tc) — 231 W
Lead-Free — Yes

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