IPD60R385CPATMA1 vs IPD60R145CFD7ATMA1 Perbandingan
Perbandingan bersamaan detil IPD60R385CPATMA1 dari Infineon dan IPD60R145CFD7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPD60R385CPATMA1 | IPD60R145CFD7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS™ CP (5th generation) | CoolMOS CFD7 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | 600 V | — |
| Drain-Source On-Resistance (RDS(on)) | 385 mΩ (typ, VGS = 10 V) | — |
| Continuous Drain Current (ID) at TC=25°C | 9 A | — |
| Pulsed Drain Current (IDM) | 27 A | — |
| Power Dissipation (PD) at TC=25°C | 83 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate Charge (Qg) | 18 nC (typ) | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Suhu Hubung Kerja | -55 °C to +150 °C | — |
| Paket / Case | PG-TO252-3 (DPAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount (DPAK, 3-pin + tab) |
| Jumlah Pin | 3 (Gate, Drain, Source; tab = Drain) | 3 (Gate, Drain, Source) |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Technology | — | CoolMOS CFD7 (superjunction) |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 600 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 16 A (T<sub>C</sub> = 25C) |
| On-Resistance R<sub>DS(on)</sub> max | — | 145 mOhm |
| Power Dissipation (P<sub>D</sub>) | — | 83 W (T<sub>C</sub> = 25C) |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | [DATA_NEEDED: Vth typical/min/max] |
| Paket | — | TO-252AA (DPAK) surface mount |
| Body Diode | — | Integrated fast body diode (low Q<sub>rr</sub>) |
| Suhu Kerja | — | -55C to +150C (junction) |
| Target Application | — | ZVS / LLC resonant converters, soft switching |