IPD60R385CPATMA1 vs IPD60R145CFD7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R385CPATMA1 disebabkan oleh Infineon dan IPD60R145CFD7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD60R385CPATMA1 IPD60R145CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series CoolMOS™ CP (5th generation) CoolMOS CFD7
FET Type N-Channel N-Channel
Drain-Source Voltage (V(BR)DSS) 600 V —
Drain-Source On-Resistance (RDS(on)) 385 mΩ (typ, VGS = 10 V) —
Continuous Drain Current (ID) at TC=25°C 9 A —
Pulsed Drain Current (IDM) 27 A —
Power Dissipation (PD) at TC=25°C 83 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Gate Charge (Qg) 18 nC (typ) —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Suhu Hubungan Operasi -55 °C to +150 °C —
Kemasan / Case PG-TO252-3 (DPAK) —
Jenis Pemasangan Surface Mount Surface Mount (DPAK, 3-pin + tab)
Kiraan Pin 3 (Gate, Drain, Source; tab = Drain) 3 (Gate, Drain, Source)
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Technology — CoolMOS CFD7 (superjunction)
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
Kemasan — TO-252AA (DPAK) surface mount
Body Diode — Integrated fast body diode (low Q<sub>rr</sub>)
Suhu Operasi — -55C to +150C (junction)
Target Application — ZVS / LLC resonant converters, soft switching

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