IPD60R385CPATMA1 vs IPD60R145CFD7ATMA1 比較
詳細並排比較 IPD60R385CPATMA1 由 Infineon 與 IPD60R145CFD7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ 啟用中規格比較
| 參數 | IPD60R385CPATMA1 | IPD60R145CFD7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS™ CP (5th generation) | CoolMOS CFD7 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | 600 V | — |
| Drain-Source On-Resistance (RDS(on)) | 385 mΩ (typ, VGS = 10 V) | — |
| Continuous Drain Current (ID) at TC=25°C | 9 A | — |
| Pulsed Drain Current (IDM) | 27 A | — |
| Power Dissipation (PD) at TC=25°C | 83 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate Charge (Qg) | 18 nC (typ) | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| 工作接面溫度 | -55 °C to +150 °C | — |
| 封裝 / 外殼 | PG-TO252-3 (DPAK) | — |
| 安裝類型 | Surface Mount | Surface Mount (DPAK, 3-pin + tab) |
| 腳位數 | 3 (Gate, Drain, Source; tab = Drain) | 3 (Gate, Drain, Source) |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Technology | — | CoolMOS CFD7 (superjunction) |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 600 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 16 A (T<sub>C</sub> = 25C) |
| On-Resistance R<sub>DS(on)</sub> max | — | 145 mOhm |
| Power Dissipation (P<sub>D</sub>) | — | 83 W (T<sub>C</sub> = 25C) |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | [DATA_NEEDED: Vth typical/min/max] |
| 封裝 | — | TO-252AA (DPAK) surface mount |
| Body Diode | — | Integrated fast body diode (low Q<sub>rr</sub>) |
| 工作溫度 | — | -55C to +150C (junction) |
| Target Application | — | ZVS / LLC resonant converters, soft switching |