IPD60R600C6ATMA1 vs IPD600N25N3GATMA1 Perbandingan
Perbandingan bersamaan detil IPD60R600C6ATMA1 dari Infineon dan IPD600N25N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD60R600C6ATMA1 | IPD600N25N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C6 | — |
| Part Suffix | ATMA1 (Tape & Reel) | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | CoolMOS C6 (Superjunction) | OptiMOS 3 trench MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 250 V |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Continuous Drain Current (ID) at TC=25°C | 7.3 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) Max at VGS=10V | 600 mΩ | — |
| Total Power Dissipation (Ptot) at TC=25°C | 63 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Rentang Suhu Kerja | -55 °C to +150 °C | — |
| Paket | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount |
| Tipe Mounting | Surface Mount | Surface Mount (Tape & Reel) |
| Jumlah Pin | 3 (Gate, Drain, Source) | — |
| Status RoHS | Compliant | — |
| Level MSL | 1 | — |
| Part Series | — | OptiMOS 3 |
| Continuous Drain Current (ID) at Tc | — | 25 A |
| Power Dissipation (PD) at Tc | — | 136 W |
| On-Resistance RDS(on) max | — | 60 mOhm at VGS = 10 V |
| Tegangan Batas Gerbang | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Bebas Halogen | — | Yes, per IEC 61249-2-21 |
| JEDEC Qualification | — | Qualified for target application |