IPD60R600C6ATMA1 vs IPD600N25N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R600C6ATMA1 disebabkan oleh Infineon dan IPD600N25N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD60R600C6ATMA1 IPD600N25N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C6 —
Part Suffix ATMA1 (Tape & Reel) —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Technology CoolMOS C6 (Superjunction) OptiMOS 3 trench MOSFET
Drain-Source Voltage (VDS) 600 V 250 V
Gate-Source Voltage (VGS) Max ±20 V —
Continuous Drain Current (ID) at TC=25°C 7.3 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) Max at VGS=10V 600 mΩ —
Total Power Dissipation (Ptot) at TC=25°C 63 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Gambaran Suhu Operasi -55 °C to +150 °C —
Kemasan PG-TO252-3 (DPAK) PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount
Jenis Pemasangan Surface Mount Surface Mount (Tape & Reel)
Bilangan Pin 3 (Gate, Drain, Source) —
Status RoHS Compliant —
Aras MSL 1 —
Part Series — OptiMOS 3
Continuous Drain Current (ID) at Tc — 25 A
Power Dissipation (PD) at Tc — 136 W
On-Resistance RDS(on) max — 60 mOhm at VGS = 10 V
Tegangan Had Kepasaran — [DATA_NEEDED: VGS(th) typical/min/max]
Suhu Hubungan Operasi — -55 C to +175 C
Lead Plating — Pb-free
RoHS Compliance — Compliant
Boson Bebas — Yes, per IEC 61249-2-21
JEDEC Qualification — Qualified for target application

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