IPG20N04S408ATMA1 vs IPG20N04S4L11ATMA1 Perbandingan
Perbandingan bersamaan detil IPG20N04S408ATMA1 dari Infineon dan IPG20N04S4L11ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPG20N04S4L11ATMA1 - 40V 20A Dual N-Ch OptiMOS MOSFET | Infineon
IPG20N04S4L11ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPG20N04S408ATMA1 | IPG20N04S4L11ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | Dual N-Channel | 2 N-Channel (Dual) |
| Technology | OptiMOS (trench MOSFET) | OptiMOS-T2 trench |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, per channel) | 20 A at 25 degC case | — |
| R_DS(on) max @ V_GS=10V | 7.6 mOhm | — |
| Maximum Power Dissipation (P_D) | 65 W | — |
| Suhu Hubung Kerja | -55 degC to +175 degC | — |
| Paket | PG-TDSON-8-4 (SuperSO8 dual) | PG-TDSON-8-4 (Super S08 / 8-TDSON EP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | MSL1 (260 degC peak reflow) | 1 (260C peak reflow) |
| AEC-Q101 Qualified | Yes | — |
| Status RoHS | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Rated | 100 percent tested | — |
| Channel Count | 2 (independent) | — |
| Operating Mode | Enhancement mode, Normal Level | — |
| FET Feature | — | Logic Level Gate |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) @ 25C | — | 20 A per channel |
| R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A | — | 11.6 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Maximum Power Dissipation (PD) | — | 41 W |
| Rentang Suhu Kerja | — | -55C to +175C |
| Avalanche Rating | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Qualified |