IPG20N04S408ATMA1 vs IPG20N04S4L11ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N04S408ATMA1 disebabkan oleh Infineon dan IPG20N04S4L11ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPG20N04S4L11ATMA1 - 40V 20A Dual N-Ch OptiMOS MOSFET | Infineon
IPG20N04S4L11ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPG20N04S408ATMA1 | IPG20N04S4L11ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | Dual N-Channel | 2 N-Channel (Dual) |
| Technology | OptiMOS (trench MOSFET) | OptiMOS-T2 trench |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, per channel) | 20 A at 25 degC case | — |
| R_DS(on) max @ V_GS=10V | 7.6 mOhm | — |
| Maximum Power Dissipation (P_D) | 65 W | — |
| Suhu Hubungan Operasi | -55 degC to +175 degC | — |
| Kemasan | PG-TDSON-8-4 (SuperSO8 dual) | PG-TDSON-8-4 (Super S08 / 8-TDSON EP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL1 (260 degC peak reflow) | 1 (260C peak reflow) |
| AEC-Q101 Qualified | Yes | — |
| Status RoHS | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Rated | 100 percent tested | — |
| Channel Count | 2 (independent) | — |
| Operating Mode | Enhancement mode, Normal Level | — |
| FET Feature | — | Logic Level Gate |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) @ 25C | — | 20 A per channel |
| R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A | — | 11.6 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Maximum Power Dissipation (PD) | — | 41 W |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Avalanche Rating | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Qualified |