IPW60R041C6FKSA1 vs IPW60R080P7XKSA1 Perbandingan
Perbandingan bersamaan detil IPW60R041C6FKSA1 dari Infineon dan IPW60R080P7XKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPW60R041C6FKSA1 | IPW60R080P7XKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | NRND | Aktif |
| Technology | CoolMOS™ C6 (Superjunction N-channel) | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 77.5 A | — |
| Power Dissipation (PD, Tc=25°C) | 481 W | — |
| On-State Resistance (RDS(on)) | 41 mΩ at VGS=10V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V typical | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Rise Time (tr) | [DATA_NEEDED: tr value] | — |
| Fall Time (tf) | [DATA_NEEDED: tf value] | — |
| Rentang Suhu Kerja | -55°C to +150°C | -55 C to +150 C (junction) |
| Paket | PG-TO247-3-1 (TO-247-3) | PG-TO247-3 (TO-247, 3-pin through-hole) |
| Tipe Mounting | Through Hole | Through Hole |
| Level MSL | Not Applicable (Through-hole) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS P7 |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 37 A |
| Power Dissipation (PD, Tc) | — | 129 W |
| RDS(on) (typ) | — | 69 mΩ at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.5 V (typ, per datasheet family) |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg value] |
| Rise Time / Fall Time (tr/tf) | — | [DATA_NEEDED: tr/tf value] |
| Packaging | — | Tube (XKSA1 ordering suffix) |