IPW60R041C6FKSA1 vs IPW60R080P7XKSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPW60R041C6FKSA1 sa pamamagitan ng Infineon at IPW60R080P7XKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPW60R080P7XKSA1 IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon

IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon

IPW60R080P7XKSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPW60R041C6FKSA1 IPW60R080P7XKSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle NRND Aktibo
Technology CoolMOS™ C6 (Superjunction N-channel) —
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25°C) 77.5 A —
Power Dissipation (PD, Tc=25°C) 481 W —
On-State Resistance (RDS(on)) 41 mΩ at VGS=10V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V typical —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Rise Time (tr) [DATA_NEEDED: tr value] —
Fall Time (tf) [DATA_NEEDED: tf value] —
Hanay ng Temperature na Operasyon -55°C to +150°C -55 C to +150 C (junction)
Packhaging PG-TO247-3-1 (TO-247-3) PG-TO247-3 (TO-247, 3-pin through-hole)
Uri ng Pagpapasok Through Hole Through Hole
Level ng MSL Not Applicable (Through-hole) —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Product Family — CoolMOS P7
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc) — 37 A
Power Dissipation (PD, Tc) — 129 W
RDS(on) (typ) — 69 mΩ at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) — 3.5 V (typ, per datasheet family)
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Rise Time / Fall Time (tr/tf) — [DATA_NEEDED: tr/tf value]
Packaging — Tube (XKSA1 ordering suffix)

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