IPW60R041C6FKSA1 vs IPW60R080P7XKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPW60R041C6FKSA1 disebabkan oleh Infineon dan IPW60R080P7XKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPW60R041C6FKSA1 IPW60R080P7XKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup NRND Aktif
Technology CoolMOS™ C6 (Superjunction N-channel) —
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25°C) 77.5 A —
Power Dissipation (PD, Tc=25°C) 481 W —
On-State Resistance (RDS(on)) 41 mΩ at VGS=10V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V typical —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Rise Time (tr) [DATA_NEEDED: tr value] —
Fall Time (tf) [DATA_NEEDED: tf value] —
Gambaran Suhu Operasi -55°C to +150°C -55 C to +150 C (junction)
Kemasan PG-TO247-3-1 (TO-247-3) PG-TO247-3 (TO-247, 3-pin through-hole)
Jenis Pemasangan Through Hole Through Hole
Aras MSL Not Applicable (Through-hole) —
Status RoHS Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Product Family — CoolMOS P7
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc) — 37 A
Power Dissipation (PD, Tc) — 129 W
RDS(on) (typ) — 69 mΩ at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) — 3.5 V (typ, per datasheet family)
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Rise Time / Fall Time (tr/tf) — [DATA_NEEDED: tr/tf value]
Packaging — Tube (XKSA1 ordering suffix)

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