IPW60R041C6FKSA1 vs IPW60R080P7XKSA1 比較

詳細並排比較 IPW60R041C6FKSA1 由 Infineon 與 IPW60R080P7XKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPW60R080P7XKSA1 IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon

IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon

IPW60R080P7XKSA1 ✓ 啟用中

規格比較

參數 IPW60R041C6FKSA1 IPW60R080P7XKSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 NRND 啟用中
Technology CoolMOS™ C6 (Superjunction N-channel) —
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25°C) 77.5 A —
Power Dissipation (PD, Tc=25°C) 481 W —
On-State Resistance (RDS(on)) 41 mΩ at VGS=10V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V typical —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Rise Time (tr) [DATA_NEEDED: tr value] —
Fall Time (tf) [DATA_NEEDED: tf value] —
工作溫度範圍 -55°C to +150°C -55 C to +150 C (junction)
封裝 PG-TO247-3-1 (TO-247-3) PG-TO247-3 (TO-247, 3-pin through-hole)
安裝類型 Through Hole Through Hole
MSL 等級 Not Applicable (Through-hole) —
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Product Family — CoolMOS P7
電晶體類型 — N-Channel MOSFET
Continuous Drain Current (ID, Tc) — 37 A
Power Dissipation (PD, Tc) — 129 W
RDS(on) (typ) — 69 mΩ at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th)) — 3.5 V (typ, per datasheet family)
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Rise Time / Fall Time (tr/tf) — [DATA_NEEDED: tr/tf value]
Packaging — Tube (XKSA1 ordering suffix)

資料表與資源

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