IR2117SPBF vs IR2117STRPBF Perbandingan

Perbandingan bersamaan detil IR2117SPBF dari Infineon dan IR2117STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2117SPBF IR2117STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Single high-side driver High-Side Single Channel
Driver Type High-side gate driver (non-inverting) —
Number of Drivers 1 —
Maximum Offset (Bootstrap) Voltage 600 V —
Output Current (Source, typ.) 0.25 A —
Output Current (Sink, typ.) 0.5 A —
Gate Drive Supply Voltage (VBS) 10 V to 20 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type CMOS Schmitt-triggered with internal pull-down —
Logic Input Polarity Non-inverting —
Undervoltage Lockout (UVLO) Yes Yes
Bootstrap Operation Yes (floating channel) —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes —
Paket 8-SOIC (SOIC-8) —
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -40C to +125C —
Status RoHS Compliant (PbF suffix) Compliant
Lead Finish Lead-free (PbF) —
Family IR2117 / IR2118 series —
Fungsi — Gate Driver, Non-Inverting
Input Logic Compatibility — CMOS / TTL
Jumlah Output — 1
Driven Device — N-Channel MOSFET / IGBT
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Channel Offset Voltage — up to +600 V
Peak Source Current (IOUT+) — 250 mA
Peak Sink Current (IOUT-) — 500 mA
Propagation Delay (Ton/Toff) — 125 ns (max)
Waktu naik — 80 ns (typ)
Waktu Menurun — 40 ns (typ)
Negative Transient Voltage Tolerance — Yes, dV/dt immune
Rentang Suhu Kerja — -40 C to +125 C
Paket / Case — 8-SOIC (0.154 inch / 3.90 mm width)
Lead-Free — Yes
Level MSL — MSL3 (per JEDEC J-STD-020)

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