IR2117SPBF vs IR2117STRPBF 比較

詳細並排比較 IR2117SPBF 由 Infineon 與 IR2117STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IR2117SPBF IR2117STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration Single high-side driver High-Side Single Channel
Driver Type High-side gate driver (non-inverting) —
Number of Drivers 1 —
Maximum Offset (Bootstrap) Voltage 600 V —
Output Current (Source, typ.) 0.25 A —
Output Current (Sink, typ.) 0.5 A —
Gate Drive Supply Voltage (VBS) 10 V to 20 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type CMOS Schmitt-triggered with internal pull-down —
Logic Input Polarity Non-inverting —
Undervoltage Lockout (UVLO) Yes Yes
Bootstrap Operation Yes (floating channel) —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes —
封裝 8-SOIC (SOIC-8) —
安裝類型 Surface Mount Surface Mount
工作溫度 -40C to +125C —
RoHS 狀態 Compliant (PbF suffix) Compliant
Lead Finish Lead-free (PbF) —
Family IR2117 / IR2118 series —
功能 — Gate Driver, Non-Inverting
Input Logic Compatibility — CMOS / TTL
輸出數量 — 1
Driven Device — N-Channel MOSFET / IGBT
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Channel Offset Voltage — up to +600 V
Peak Source Current (IOUT+) — 250 mA
Peak Sink Current (IOUT-) — 500 mA
Propagation Delay (Ton/Toff) — 125 ns (max)
上升時間 — 80 ns (typ)
下降時間 — 40 ns (typ)
Negative Transient Voltage Tolerance — Yes, dV/dt immune
工作溫度範圍 — -40 C to +125 C
封裝 / 外殼 — 8-SOIC (0.154 inch / 3.90 mm width)
Lead-Free — Yes
MSL 等級 — MSL3 (per JEDEC J-STD-020)

資料表與資源

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