IR2304SPBF vs 1EDN7146UXTSA1 Perbandingan

Perbandingan bersamaan detil IR2304SPBF dari Infineon dan 1EDN7146UXTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2304SPBF 1EDN7146UXTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC —
Configuration High and Low Side, Independent Channels —
Jumlah Output 2 —
Maximum Offset (Bootstrap) Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source/Sink Current 60 mA / 130 mA —
Propagation Delay (Typical) 220 ns —
Input Logic Compatibility 3.3 V, 5 V, 15 V —
Undervoltage Lockout (UVLO) Both High-Side and Low-Side Channels —
Negative Transient Voltage Tolerance Yes (dV/dt immune) —
Logic Input Polarity Non-Inverting —
Paket 8-Pin SOIC (SO-8 N) PG-VSON-1 (6-pin with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -40 C to +125 C -40C to +125C
Technology HVIC + Latch-Immune CMOS, Monolithic —
Status RoHS Compliant (Pb-free) Compliant
Driver Type — Single-channel high-side TDI gate driver
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
Waktu naik — [DATA_NEEDED: typical rise time ns]
Waktu Menurun — [DATA_NEEDED: typical fall time ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
Target Transistor — GaN SG HEMT or power MOSFET
Level MSL — [DATA_NEEDED: MSL rating]
Topology Support — Half-bridge, low-side, high-side

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