IR2304SPBF vs 1EDN7146UXTSA1 比較

詳細並排比較 IR2304SPBF 由 Infineon 與 1EDN7146UXTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1EDN7146UXTSA1 1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 ✓ 啟用中

規格比較

參數 IR2304SPBF 1EDN7146UXTSA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Half-Bridge Gate Driver IC —
Configuration High and Low Side, Independent Channels —
輸出數量 2 —
Maximum Offset (Bootstrap) Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source/Sink Current 60 mA / 130 mA —
Propagation Delay (Typical) 220 ns —
Input Logic Compatibility 3.3 V, 5 V, 15 V —
Undervoltage Lockout (UVLO) Both High-Side and Low-Side Channels —
Negative Transient Voltage Tolerance Yes (dV/dt immune) —
Logic Input Polarity Non-Inverting —
封裝 8-Pin SOIC (SO-8 N) PG-VSON-1 (6-pin with exposed pad)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40 C to +125 C -40C to +125C
Technology HVIC + Latch-Immune CMOS, Monolithic —
RoHS 狀態 Compliant (Pb-free) Compliant
Driver Type — Single-channel high-side TDI gate driver
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
上升時間 — [DATA_NEEDED: typical rise time ns]
下降時間 — [DATA_NEEDED: typical fall time ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
Target Transistor — GaN SG HEMT or power MOSFET
MSL 等級 — [DATA_NEEDED: MSL rating]
Topology Support — Half-bridge, low-side, high-side

資料表與資源

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