IR2304SPBF vs 1EDN7146UXTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IR2304SPBF disebabkan oleh Infineon dan 1EDN7146UXTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IR2304SPBF 1EDN7146UXTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC —
Configuration High and Low Side, Independent Channels —
Bilangan Output 2 —
Maximum Offset (Bootstrap) Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source/Sink Current 60 mA / 130 mA —
Propagation Delay (Typical) 220 ns —
Input Logic Compatibility 3.3 V, 5 V, 15 V —
Undervoltage Lockout (UVLO) Both High-Side and Low-Side Channels —
Negative Transient Voltage Tolerance Yes (dV/dt immune) —
Logic Input Polarity Non-Inverting —
Kemasan 8-Pin SOIC (SO-8 N) PG-VSON-1 (6-pin with exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -40 C to +125 C -40C to +125C
Technology HVIC + Latch-Immune CMOS, Monolithic —
Status RoHS Compliant (Pb-free) Compliant
Driver Type — Single-channel high-side TDI gate driver
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
Masa Pertambahan — [DATA_NEEDED: typical rise time ns]
Masa jatuh — [DATA_NEEDED: typical fall time ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
Target Transistor — GaN SG HEMT or power MOSFET
Aras MSL — [DATA_NEEDED: MSL rating]
Topology Support — Half-bridge, low-side, high-side

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