IRF520NPBF vs IRLZ34NPBF Perbandingan

Perbandingan bersamaan detil IRF520NPBF dari Infineon dan IRLZ34NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF520NPBF IRLZ34NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon (formerly International Rectifier)
Series HEXFET —
FET Type N-Channel —
Drain-to-Source Voltage (V_DSS) 100 V —
Continuous Drain Current (I_D) at Tc 9.7 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current value] —
Gate-to-Source Voltage (V_GS) max ±20 V —
R_DS(on) max at V_GS=10V 200 mOhm —
Total Gate Charge (Q_g) 16.7 nC —
Power Dissipation (P_D) at Tc 48 W —
Rentang Suhu Kerja -55C to +175C —
Paket TO-220AB (through-hole) TO-220AB (through-hole, 3 leads + tab)
Tipe Mounting Through Hole Through Hole
Level MSL 1 (unlimited) Not applicable (through-hole)
Status RoHS Compliant (Pb-free) Compliant (Pb-free PBF suffix)
Lead-Free Finish Yes (PBF suffix) —
Technology HEXFET (vertical DMOS) —
Part Number Suffix — PBF = Lead-free (Pb-free), Tube packaging
Tipe Transistor — N-Channel HEXFET Power MOSFET
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25 C — 30 A
Continuous Drain Current (ID) at Tc=100 C — [DATA_NEEDED: ID at Tc=100 C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance Rds(on) max @ VGS=10 V — 35 mOhm
On-Resistance Rds(on) max @ VGS=5 V — [DATA_NEEDED: Rds(on) at VGS=5 V]
Gate Threshold Voltage VGS(th) — 1.0 V to 2.0 V (logic-level)
Total Gate Charge (Qg) — 16.7 nC (typical)
Power Dissipation (PD) at Tc=25 C — 68 W
Suhu Hubung Kerja — -55 C to +175 C

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon