IRF520NPBF vs IRLZ34NPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF520NPBF sa pamamagitan ng Infineon at IRLZ34NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF520NPBF | IRLZ34NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon (formerly International Rectifier) |
| Series | HEXFET | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (V_DSS) | 100 V | — |
| Continuous Drain Current (I_D) at Tc | 9.7 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-to-Source Voltage (V_GS) max | ±20 V | — |
| R_DS(on) max at V_GS=10V | 200 mOhm | — |
| Total Gate Charge (Q_g) | 16.7 nC | — |
| Power Dissipation (P_D) at Tc | 48 W | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | — |
| Packhaging | TO-220AB (through-hole) | TO-220AB (through-hole, 3 leads + tab) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Level ng MSL | 1 (unlimited) | Not applicable (through-hole) |
| Tindminan RoHS | Compliant (Pb-free) | Compliant (Pb-free PBF suffix) |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Technology | HEXFET (vertical DMOS) | — |
| Part Number Suffix | — | PBF = Lead-free (Pb-free), Tube packaging |
| Uri ng Transistor | — | N-Channel HEXFET Power MOSFET |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25 C | — | 30 A |
| Continuous Drain Current (ID) at Tc=100 C | — | [DATA_NEEDED: ID at Tc=100 C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ VGS=10 V | — | 35 mOhm |
| On-Resistance Rds(on) max @ VGS=5 V | — | [DATA_NEEDED: Rds(on) at VGS=5 V] |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (logic-level) |
| Total Gate Charge (Qg) | — | 16.7 nC (typical) |
| Power Dissipation (PD) at Tc=25 C | — | 68 W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |