IRF520NPBF vs IRLZ34NPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF520NPBF disebabkan oleh Infineon dan IRLZ34NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF520NPBF | IRLZ34NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon (formerly International Rectifier) |
| Series | HEXFET | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (V_DSS) | 100 V | — |
| Continuous Drain Current (I_D) at Tc | 9.7 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-to-Source Voltage (V_GS) max | ±20 V | — |
| R_DS(on) max at V_GS=10V | 200 mOhm | — |
| Total Gate Charge (Q_g) | 16.7 nC | — |
| Power Dissipation (P_D) at Tc | 48 W | — |
| Gambaran Suhu Operasi | -55C to +175C | — |
| Kemasan | TO-220AB (through-hole) | TO-220AB (through-hole, 3 leads + tab) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Aras MSL | 1 (unlimited) | Not applicable (through-hole) |
| Status RoHS | Compliant (Pb-free) | Compliant (Pb-free PBF suffix) |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Technology | HEXFET (vertical DMOS) | — |
| Part Number Suffix | — | PBF = Lead-free (Pb-free), Tube packaging |
| Jenis Transistor | — | N-Channel HEXFET Power MOSFET |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25 C | — | 30 A |
| Continuous Drain Current (ID) at Tc=100 C | — | [DATA_NEEDED: ID at Tc=100 C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ VGS=10 V | — | 35 mOhm |
| On-Resistance Rds(on) max @ VGS=5 V | — | [DATA_NEEDED: Rds(on) at VGS=5 V] |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (logic-level) |
| Total Gate Charge (Qg) | — | 16.7 nC (typical) |
| Power Dissipation (PD) at Tc=25 C | — | 68 W |
| Suhu Hubungan Operasi | — | -55 C to +175 C |