IRF520NPBF vs IRLZ34NPBF 比較

詳細並排比較 IRF520NPBF 由 Infineon 與 IRLZ34NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF520NPBF IRLZ34NPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon (formerly International Rectifier)
Series HEXFET —
FET Type N-Channel —
Drain-to-Source Voltage (V_DSS) 100 V —
Continuous Drain Current (I_D) at Tc 9.7 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current value] —
Gate-to-Source Voltage (V_GS) max ±20 V —
R_DS(on) max at V_GS=10V 200 mOhm —
Total Gate Charge (Q_g) 16.7 nC —
Power Dissipation (P_D) at Tc 48 W —
工作溫度範圍 -55C to +175C —
封裝 TO-220AB (through-hole) TO-220AB (through-hole, 3 leads + tab)
安裝類型 Through Hole Through Hole
MSL 等級 1 (unlimited) Not applicable (through-hole)
RoHS 狀態 Compliant (Pb-free) Compliant (Pb-free PBF suffix)
Lead-Free Finish Yes (PBF suffix) —
Technology HEXFET (vertical DMOS) —
Part Number Suffix — PBF = Lead-free (Pb-free), Tube packaging
電晶體類型 — N-Channel HEXFET Power MOSFET
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25 C — 30 A
Continuous Drain Current (ID) at Tc=100 C — [DATA_NEEDED: ID at Tc=100 C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance Rds(on) max @ VGS=10 V — 35 mOhm
On-Resistance Rds(on) max @ VGS=5 V — [DATA_NEEDED: Rds(on) at VGS=5 V]
Gate Threshold Voltage VGS(th) — 1.0 V to 2.0 V (logic-level)
Total Gate Charge (Qg) — 16.7 nC (typical)
Power Dissipation (PD) at Tc=25 C — 68 W
工作接面溫度 — -55 C to +175 C

資料表與資源

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