IRF640NPBF vs STP20NF20L Perbandingan
Perbandingan bersamaan detil IRF640NPBF dari Infineon dan STP20NF20L dari STMicroelectronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
STMicroelectronics
STP20NF20L - 200V 18A N-Ch STripFET MOSFET | STMicroelectronics
STP20NF20L ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IRF640NPBF | STP20NF20L |
|---|---|---|
| Merek | Infineon | STMicroelectronics |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | — |
| Suhu Hubung Kerja | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | STripFET™ (planar silicon gate) |
| Tipe Transistor | N-Channel Enhancement Mode | — |
| Paket | TO-220AB (through-hole, 3-pin) | TO-220 (through-hole, 3-lead) |
| Tipe Mounting | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) | — | 18 A (Tc) |
| On-Resistance (RDS(on)) | — | 0.10 Ω (max) |
| Power Dissipation (PD) | — | 110 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Gate Charge (Qg) | — | Low gate charge (STripFET™ optimized) |
| Input Capacitance (Ciss) | — | Minimized by STripFET™ process |
| Rentang Suhu Kerja | — | [DATA_NEEDED: TJ min/max] |
| Process Technology | — | STripFET™ (low Qg, low Ciss) |