IRF640NPBF vs STP20NF20L 比較
詳細並排比較 IRF640NPBF 由 Infineon 與 STP20NF20L 由 STMicroelectronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF640NPBF | STP20NF20L |
|---|---|---|
| 品牌 | Infineon | STMicroelectronics |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | — |
| 工作接面溫度 | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | STripFET™ (planar silicon gate) |
| 電晶體類型 | N-Channel Enhancement Mode | — |
| 封裝 | TO-220AB (through-hole, 3-pin) | TO-220 (through-hole, 3-lead) |
| 安裝類型 | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) | — | 18 A (Tc) |
| On-Resistance (RDS(on)) | — | 0.10 Ω (max) |
| Power Dissipation (PD) | — | 110 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Gate Charge (Qg) | — | Low gate charge (STripFET™ optimized) |
| Input Capacitance (Ciss) | — | Minimized by STripFET™ process |
| 工作溫度範圍 | — | [DATA_NEEDED: TJ min/max] |
| Process Technology | — | STripFET™ (low Qg, low Ciss) |