IRF640NPBF vs STP20NF20L Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF640NPBF disebabkan oleh Infineon dan STP20NF20L disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

STMicroelectronics
STP20NF20L STP20NF20L - 200V 18A N-Ch STripFET MOSFET | STMicroelectronics

STP20NF20L - 200V 18A N-Ch STripFET MOSFET | STMicroelectronics

STP20NF20L ✓ Aktif

Pengandingan Spesifikasi

Parametr IRF640NPBF STP20NF20L
Merek Infineon STMicroelectronics
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at Tc 18 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) max ±20 V —
Static Drain-to-Source On-Resistance (RDS(on)) 150 mOhm max at VGS = 10 V —
Power Dissipation (PD) at Tc=25C 150 W —
Total Gate Charge (Qg) 44.7 nC —
Suhu Hubungan Operasi -55C to +150C —
Technology HEXFET (5th Generation) STripFET™ (planar silicon gate)
Jenis Transistor N-Channel Enhancement Mode —
Kemasan TO-220AB (through-hole, 3-pin) TO-220 (through-hole, 3-lead)
Jenis Pemasangan Through Hole Through Hole
Avalanche Energy Rated Yes —
dv/dt Rating Dynamic, rated —
Status RoHS Compliant Compliant
Lead-Free Yes (PBF suffix) Yes
Manufacturer Infineon (formerly International Rectifier) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) — 18 A (Tc)
On-Resistance (RDS(on)) — 0.10 Ω (max)
Power Dissipation (PD) — 110 W (Tc)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) min/typ/max]
Gate Charge (Qg) — Low gate charge (STripFET™ optimized)
Input Capacitance (Ciss) — Minimized by STripFET™ process
Gambaran Suhu Operasi — [DATA_NEEDED: TJ min/max]
Process Technology — STripFET™ (low Qg, low Ciss)

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