IRFH5015TRPBF vs IRF8734TRPBF Perbandingan
Perbandingan bersamaan detil IRFH5015TRPBF dari Infineon dan IRF8734TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFH5015TRPBF | IRF8734TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | StrongIRFET™ (HEXFET) |
| Drain-Source Voltage (VDS) | 150 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 10 A | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | — |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| Paket | 8-PQFN (5x6) SuperSO8 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | — |
| Suhu Kerja | -55C to +150C (TJ max) | — |
| Status RoHS | Compliant | Compliant (PBF suffix) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 21 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.5 mOhm |
| Gate Charge (Qg) typ | — | 20 nC |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Paket / Case | — | 8-SOIC (SO-8) |
| Rentang Suhu Kerja | — | -55C to +150C (junction) |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Avalanche Energy Rating | — | Fully characterized avalanche voltage |
| Lead-Free / Halogen-Free | — | Lead-free (PBF suffix) |
| Level MSL | — | [DATA_NEEDED: MSL rating per J-STD-020] |
| Packaging | — | Tape & Reel (TR) |