IRFH5015TRPBF vs IRF8734TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH5015TRPBF disebabkan oleh Infineon dan IRF8734TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFH5015TRPBF | IRF8734TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | StrongIRFET™ (HEXFET) |
| Drain-Source Voltage (VDS) | 150 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 10 A | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | — |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| Kemasan | 8-PQFN (5x6) SuperSO8 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | — |
| Suhu Operasi | -55C to +150C (TJ max) | — |
| Status RoHS | Compliant | Compliant (PBF suffix) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 21 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.5 mOhm |
| Gate Charge (Qg) typ | — | 20 nC |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Kemasan / Case | — | 8-SOIC (SO-8) |
| Gambaran Suhu Operasi | — | -55C to +150C (junction) |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Avalanche Energy Rating | — | Fully characterized avalanche voltage |
| Lead-Free / Halogen-Free | — | Lead-free (PBF suffix) |
| Aras MSL | — | [DATA_NEEDED: MSL rating per J-STD-020] |
| Packaging | — | Tape & Reel (TR) |