IRFP250MPBF vs IRF150P220AKMA1 Perbandingan
Perbandingan bersamaan detil IRFP250MPBF dari Infineon dan IRF150P220AKMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFP250MPBF | IRF150P220AKMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $2,55 | — |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRFP250MPBF | IRF150P220AKMA1 |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) | StrongIRFET |
| Drain-Source Voltage (Vds) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 30 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 75 mOhm max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 4 V (typ) | — |
| Total Gate Charge (Qg) | 82 nC | — |
| Power Dissipation (Pd) at Tc=25C | 214 W | 556 W |
| Suhu Hubung Kerja | -55C to +175C | — |
| Paket / Case | TO-247AC (3-pin + tab) | — |
| Tipe Mounting | Through Hole | Through Hole |
| Jumlah Pin | 3 | — |
| Avalanche Rated | Yes | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Level MSL | 1 (unlimited) | — |
| Drain-Source Voltage (VDS max) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 203 A |
| On-Resistance (RDS(on) max) at VGS=10V | — | 2.7 mOhm |
| Gate-Source Voltage (VGS max) | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation (Pd) at Ta=25C | — | 3.8 W |
| Rentang Suhu Kerja | — | -55C to +175C |
| Paket | — | TO-247-3 (PG-TO247-3) |
| Terminal Finish | — | Tin (Sn) |
| JESD-609 Code | — | e3 |