IRFP250MPBF vs IRF150P220AKMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFP250MPBF sa pamamagitan ng Infineon at IRF150P220AKMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFP250MPBF IRF150P220AKMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Presyo ng Yunit (USD) $2.55 —
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFP250MPBF IRF150P220AKMA1
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (IR MOSFET) StrongIRFET
Drain-Source Voltage (Vds) 200 V —
Continuous Drain Current (Id) at Tc=25C 30 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] —
Static Drain-Source On-Resistance (RDS(on)) 75 mOhm max @ Vgs=10V —
Gate-Source Threshold Voltage (Vgs(th)) 4 V (typ) —
Total Gate Charge (Qg) 82 nC —
Power Dissipation (Pd) at Tc=25C 214 W 556 W
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging / Kaso TO-247AC (3-pin + tab) —
Uri ng Pagpapasok Through Hole Through Hole
Bilang ng Pins 3 —
Avalanche Rated Yes —
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Level ng MSL 1 (unlimited) —
Drain-Source Voltage (VDS max) — 150 V
Continuous Drain Current (ID) at Tc=25C — 203 A
On-Resistance (RDS(on) max) at VGS=10V — 2.7 mOhm
Gate-Source Voltage (VGS max) — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typ]
Power Dissipation (Pd) at Ta=25C — 3.8 W
Hanay ng Temperature na Operasyon — -55C to +175C
Packhaging — TO-247-3 (PG-TO247-3)
Terminal Finish — Tin (Sn)
JESD-609 Code — e3

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita